THEORETICAL-ANALYSIS OF HEAVY DOPING EFFECTS ON ALGAAS/GAAS HBTS

被引：10

作者：

SAITO, K ^{[1
]}

KONAGAI, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

AIGaAs/GaAs HBT; Carbon-doped GaAs; Heavy doping effects; Minority electron transport; Monte Carlo simulation;

D O I：

10.1143/JJAP.29.1900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The minority electron transport in p-type GaAs with hole concentrations greater than 1020cm-3was investigated using the Monte Carlo method. It is found that electron-hole and the plasmon scatterings play a dominant role in heavily doped p-type GaAs. The estimated electron mobility and diffusion length are in good agreement with the experimentally obtained values. Based on the above, the static and high-frequency characteristics of AlGaAs/GaAs HBT's were analyzed. The band gap narrowing and the Auger recombination are found to induce substantial effects on the current gain. The maximum frequency of oscillation of 440 GHz and the propagation delay time of 1.5 ps/gate are predicted for the base doping of 1×1021cm-3. © 1990 IOP Publishing Ltd.

引用

页码：1900 / 1907

页数：8

共 42 条

[1] ELECTRON-MOBILITY IN P-GAAS BY TIME OF FLIGHT [J].