Chemistry and band offsets of HfO2 thin films for gate insulators

被引：65

作者：

Oshima, M ^{[1
]}

Toyoda, S

Okumura, T

Okabayashi, J

Kumigashira, H

Ono, K

Niwa, M

Usuda, K

Hirashita, N

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] KEK, Inst Mat Struct Sci, Tsukuba 3050801, Japan

[3] Semicond Technol Acad Res Ctr, Kanagawa 2220033, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.1611272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interfacial chemistry and band offsets of HfO2 films grown on Si(100) substrates are investigated using high-resolution angle-resolved photoelectron spectroscopy and are correlated with interfacial structures revealed by transmission electron microscope. Hf 4f and O 1s spectra show similar chemical shifts indicating the existence of a double layer structure consisting of a HfO2, upper layer and a SiO2-rich Hf1-xSixO2 lower layer. Two types of valence band offsets are clearly determined by a double subtraction method to be 3.0 and 3.8 eV that can be attributed to DeltaEv(1) for the upper layer HfO2/Si and DeltaEv(2) for the lower layer Hf1-xSixO2/Si, respectively. (C) 2003 American Institute of Physics.

引用

页码：2172 / 2174

页数：3

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