Analysis of Si/Si1-xGex retrograded double quantum well p-type MOSFET

被引：12

作者：

Chretien, O ^{[1
]}

Yousif, MYA

Nur, O

Patel, CJ

Willander, M

机构：

[1] Chalmers Univ Technol, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden

[2] Gothenburg Univ, S-41296 Gothenburg, Sweden

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 09期

关键词：

D O I：

10.1088/0268-1242/13/9/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model for a double Si/Si1-xGex QW-PMOS is developed for the determination of the threshold voltages and an estimate of the hole densities in each conducting QW-channel including the silicon surface channel. Detailed analysis of the uncoupled retrograded double Si/Si1-xGex QW-PMOS is carried out with varying structural and physical parameters. The model adequately describes and predicts the best design choice of the double QW structure for optimum device performance. The procedure for the evaluation of the optimum structure is not just limited to QW-PMOSs in bulk silicon technology but can be also successfully applied for realizing QW-NMOS structures on relaxed Si1-xGex buffer layers.

引用

页码：999 / 1005

页数：7

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