ANALYTICAL MODEL OF SI/SIGE FIELD-EFFECT TRANSISTORS

被引：4

作者：

SADEK, A

HABIB, SED

ISMAIL, K

机构：

[1] Department of Electronics and Communications, Faculty of Engineering, Cairo University, Giza

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 11期

关键词：

D O I：

10.1016/0038-1101(95)00116-B

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：1969 / 1971

页数：3

共 11 条

[1] AN ANALYTIC MODEL FOR HIGH-ELECTRON-MOBILITY TRANSISTORS [J].

CHANG, CS ;

FETTERMAN, HR .

SOLID-STATE ELECTRONICS, 1987, 30 (05) :485-491

[2]

CHANG CS, 1987, IEEE T ELECTRON DEV, V34, P1456, DOI 10.1109/T-ED.1987.23106

[3] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].

DELAGEBEAUDEUF, D ;

LINH, NT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960

[4]

GOTO K, 1992, INST PHYS CONF SER, V120, P449

[5]

HOFMANN KR, 1991, MATER RES SOC SYMP P, V220, P457, DOI 10.1557/PROC-220-457

[6] HIGH-PERFORMANCE SI/SIGE N-TYPE MODULATION-DOPED TRANSISTORS [J].

ISMAIL, K ;

RISHTON, S ;

CHU, JO ;

CHAN, K ;

MEYERSON, BS .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (07) :348-350

[7] ANALYSIS OF SELF-ALIGNED MOSFETS WITH MODULATION-DOPED SIGE CHANNELS [J].

JAIN, F ;

GOKHALE, M ;

ISLAM, SK ;

CHUNG, CL .

SOLID-STATE ELECTRONICS, 1993, 36 (11) :1613-1618

[8] HIGH-MOBILITY GESI PMOS ON SIMOX [J].

NAYAK, DK ;

WOO, JCS ;

YABIKU, GK ;

MACWILLIAMS, KP ;

PARK, JS ;

WANG, KL .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (11) :520-522

[9]

NAYAK DK, 1993, 1993 INT C SOL STAT, P943

[10]

SZE S, 1990, HIGH SPEED SEMICONDU, P93

← 1 2 →