AN ANALYTIC MODEL FOR HIGH-ELECTRON-MOBILITY TRANSISTORS

被引：24

作者：

CHANG, CS

FETTERMAN, HR

机构：

[1] Univ of California, Los Angeles, Los, Angeles, CA, USA, Univ of California, Los Angeles, Los Angeles, CA, USA

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 05期

关键词：

D O I：

10.1016/0038-1101(87)90202-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TRANSISTORS, FIELD EFFECT

引用

页码：485 / 491

页数：7

共 17 条

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