Growth of InN by chloride-transport vapor phase epitaxy

被引:12
作者
Sunakawa, H [1 ]
Yamaguchi, AA [1 ]
Kimura, A [1 ]
Usui, A [1 ]
机构
[1] NEC CORP LTD, OPTOELECT RES LABS, TSUKUBA, IBARAKI 305, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 11A期
关键词
InN; GaAs; GaN; vapor phase epitaxy; indium chloride; X-ray diffraction; hexagonal;
D O I
10.1143/JJAP.35.L1395
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hexagonal single crystalline InN film are grown on a hexagonal-GaN epitaxial layer in a GaAs(100) substrates by chloride-transport vapor phase epitaxy. It is found that lower temperatures for the upstream region of the reator, where indium chloride is generated, are crucial for InN growth. In addition, the use of inert gas such as nitrogen, is necessary for growth. Based on these results, the necessity of InCl3 as a source material is emphasized for InN growth. The grown film reveals a hexagonal structure whose c-axis orients to the GaAs[111]B direction.
引用
收藏
页码:L1395 / L1397
页数:3
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