ATOMIC LAYER EPITAXY OF III-V COMPOUNDS - CHEMISTRY AND APPLICATIONS

We address atomic layer epitaxy (ALE) of III-V compounds, focusing in particular on ALE by chloride source gases of group III elements and hydrides of group V elements. A self-limiting growth mechanism in ALE is the most significant advantage over other epitaxial methods. To realize this mechanism, selections of source gases and the reactor design are described. The chemistry and growth kinetic of ALE, which also provide interesting information for understanding other VPE processes, are discussed, and a model of the self-limiting growth mechanism of chloride ALE is proposed. As a promising application of ALE, the growth of fine structures using sidewall epitaxy and selective area growth is demonstrated Finally, prospects for the future are briefly discussed.