High Resolution Optical Spectroscopy of Air-Induced Electrical Instabilities in n-type Polymer Semiconductors

被引：45

作者：

Di Pietro, Riccardo ^{[1
]}

Sirringhaus, Henning ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 25期

基金：

英国工程与自然科学研究理事会;

关键词：

air stability; bias stress; degradation; n-type polymer; optical spectroscopy; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; ORGANIC SEMICONDUCTORS; DIIMIDE SEMICONDUCTORS; HIGH-MOBILITY; TEMPERATURE; STABILITY; DEVICES; DESIGN;

D O I：

10.1002/adma.201200829

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3367 / 3372

页数：6

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