2600 V, 12 A, 4H-SiC, asymmetrical Gate Turn Off (GTO) Thyristor development

被引：25

作者：

Agarwal, A ^{[1
]}

Ryu, SH ^{[1
]}

Singh, R ^{[1
]}

Kordina, O ^{[1
]}

Palmour, JW ^{[1
]}

机构：

[1] Cree Res Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

GTO; high temperature; JTE; power devices; switch; Thyristors;

D O I：

10.4028/www.scientific.net/MSF.338-342.1387

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a 2 mm diameter, 4H-SiC, asymmetrical Gate Turn Off (GTO) Thyristor with a blocking voltage of 2600 V and a forward current of 12 A - the highest reported power handling capability of 31 kW for a single device in SiC. Furthermore, the I mm diameter devices showed a forward blocking voltage of 3100 V. The 5-epilayer structure utilized a blocking layer that was 50 mum thick, p-type, doped at about 7-9x10(14) cm(-3). The devices were terminated with a single zone Junction Termination Extension (JTE) region formed by ion-implantation of nitrogen at 650 degreesC. The devices required less than 10 mA gate current to turn-on when blocking 2000 V between anode and cathode.

引用

页码：1387 / 1390

页数：4

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