A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor

被引：35

作者：

Lin, KW

Chen, HI

Lu, CT

Tsai, YY

Chuang, HM

Chen, CY

Liu, WC

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engineer, Tainan 70101, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 07期

关键词：

D O I：

10.1088/0268-1242/18/7/303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interesting hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode has been fabricated and studied. Both the steady state and the transient condition of the hydrogen adsorption process are investigated. Even at room temperature, an extremely low hydrogen concentration of 15 ppm H-2/air can be detected. In addition, the wide operating temperature range of 250 K of the studied Pd/InGaP hydrogen sensor is found. From experimental results, it is shown that the variation of Schottky barrier height increases with the increase of the operating temperature and hydrogen concentration. As the operation temperature is elevated, the water formation effect is also studied in the quasi-equilibrium region under the transient condition.

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页码：615 / 619

页数：5

相关论文

共 20 条

[1] A model of the Temkin isotherm behavior for hydrogen adsorption at Pd-SiO2 interfaces [J].

Eriksson, M ;

Lundstrom, I ;

Ekedahl, LG .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :3143-3146

[2] Hydrogen adsorption states at the Pd/SiO2 interface and simulation of the response of a Pd metal-oxide-semiconductor hydrogen sensor [J].

Eriksson, M ;

Ekedahl, LG .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) :3947-3951

[3] TRENCH PD/SI METAL-OXIDE-SEMICONDUCTOR SCHOTTKY-BARRIER DIODE FOR A HIGH-SENSITIVITY HYDROGEN GAS SENSOR [J].

FANG, YK ;

HWANG, SB ;

LIN, CY ;

LEE, CC .

APPLIED PHYSICS LETTERS, 1990, 57 (25) :2686-2688

[4] Bridging the pressure gap for palladium metal-insulator-semiconductor hydrogen sensors in oxygen containing environments [J].

Johansson, M ;

Lundstrom, I ;

Ekedahl, LG .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (01) :44-51

[5] COMPARISON AND ANALYSIS OF PD-GAAS AND PT-GAAS SCHOTTKY DIODES FOR HYDROGEN DETECTION [J].

KANG, WP ;

GURBUZ, Y .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) :8175-8181

[6]

KATSUTA H, 1979, J PHYS CHEM SOLIDS, V40, P697, DOI 10.1016/0022-3697(79)90182-3

[7]

KULIEV BB, 1983, SOV PHYS SEMICOND+, V17, P875

[8] Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor [J].

Liu, WC ;

Pan, HJ ;

Chen, HI ;

Lin, KW ;

Cheng, SY ;

Yu, KH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (09) :1938-1944

[9] Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes [J].

Liu, WC ;

Pan, HJ ;

Chen, HI ;

Lin, KW ;

Wang, CK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (11) :6254-6259

[10] Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors [J].

Lour, WS ;

Chang, WL ;

Liu, WC ;

Shie, YH ;

Pan, HJ ;

Chen, JY ;

Wang, WC .

APPLIED PHYSICS LETTERS, 1999, 74 (15) :2155-2157