Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

被引：13

作者：

Chaldyshev, VV ^{[1
]}

Preobrazhenskii, VV

Putyato, MA

Semyagin, BR

Bert, NA

Kunitsyn, AE

Musikhin, YG

Tret'yakov, VV

Werner, P

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 10期

关键词：

D O I：

10.1134/1.1187561

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Molecular-beam epitaxy at 200 degrees C is used to grow an InAs/GaAs superlattice containing 30 InAs delta-layers with a nominal thickness of 1 monolayer, separated by GaAs layers of thickness 30 nm. It is found that the excess arsenic concentration in such a superlattice is 0.9 x 10(20) cm(-3). Annealing the samples at 500 and 600 degrees C for 15 min leads to precipitation of the excess arsenic mainly into the InAs delta-layers. As a result, a superlattice of two-dimensional sheets of nanoscale arsenic clusters, which coincides with the superlattice of the InAs delta-layers in the GaAs matrix, is obtained. (C) 1998 American Institute of Physics. [S1063-7826(98)00310-X].

引用

页码：1036 / 1039

页数：4

共 18 条

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