Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature

被引：21

作者：

Bert, NA ^{[1
]}

Chaldyshev, VV ^{[1
]}

Faleev, NN ^{[1
]}

Kunitsyn, AE ^{[1
]}

Lubyshev, DI ^{[1
]}

Preobrazhenskii, VV ^{[1
]}

Semyagin, BR ^{[1
]}

Tretyakov, VV ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK 630090,RUSSIA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 01期

关键词：

D O I：

10.1088/0268-1242/12/1/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have shown that two-dimensional layers of arsenic nanoclusters separated by a cluster-free GaAs matrix can be formed using indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature (200 degrees C). Spatially ordered structures of As clusters have been obtained in epitaxial LT GaAs films doped with Si donors and Be accepters and also in undoped films.

引用

页码：51 / 54

页数：4

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