Preparation of sputtered (Bax,Sr1-x)TiO3 thin films directly on copper

被引:29
作者
Laughlin, B [1 ]
Ihlefeld, J [1 ]
Maria, JP [1 ]
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Electroceram Thin Films Grp, Raleigh, NC 27695 USA
关键词
D O I
10.1111/j.1551-2916.2005.00488.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
(Ba-0.6,Sr-0.4)TiO3 (BST) films were deposited on copper foils by radio frequency magnetron sputtering. By the use of controlled pO(2) high-temperature anneals, the films were completely crystallized in the absence of substrate oxidation. X-ray diffraction and transmission electron microscopy (TEM) revealed an abrupt Cu/BST interface. The deposited BST films exhibit a zero bias permittivity and loss tangent values of 600 and 0.018, respectively. An electrical tunability ratio of 3.5:1 is observed on these metal-insulator-metal devices. Devices show leakage currents of 10(-8) A/cm(2) at +/- 10 V/mu m, and loss tangents as low as 0.003 in fields approaching 40 V/mu m.
引用
收藏
页码:2652 / 2654
页数:3
相关论文
共 16 条
[1]  
Al-Shareef H. N., 1993, Integrated Ferroelectrics, V3, P321, DOI 10.1080/10584589308216687
[2]  
Barin I., 1973, THERMOCHEMICAL PROPE
[3]  
Chase Jr. M.W., 1985, J PHYS CHEM REF D S1, V14
[4]   Dielectric properties of random and ⟨100⟩ oriented SrTiO3 and (Ba,Sr)TiO3 thin films fabricated on ⟨100⟩ nickel tapes [J].
Dawley, JT ;
Clem, PG .
APPLIED PHYSICS LETTERS, 2002, 81 (16) :3028-3030
[5]   Dielectric materials for sintering in reducing atmospheres [J].
Hennings, DFK .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) :1637-1642
[6]   Copper compatible barium titanate thin films for embedded passives [J].
Ihlefeld, J ;
Laughlin, B ;
Hunt-Lowery, A ;
Borland, W ;
Kingon, A ;
Maria, JP .
JOURNAL OF ELECTROCERAMICS, 2005, 14 (02) :95-102
[7]   Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices [J].
Im, J ;
Auciello, O ;
Baumann, PK ;
Streiffer, SK ;
Kaufman, DY ;
Krauss, AR .
APPLIED PHYSICS LETTERS, 2000, 76 (05) :625-627
[8]  
Laughlin B, 2004, MATER RES SOC SYMP P, V784, P301
[9]   High dielectric constant BaxSr1-xTiO3 (BST) thin films made by MOCVD techniques for DRAM applications [J].
Li, TK ;
Zawadzki, P ;
Stall, RA ;
Liang, SH ;
Lu, YC .
INTEGRATED FERROELECTRICS, 1997, 17 (1-4) :127-+
[10]   Crystallization in SiO2-metal oxide alloys [J].
Maria, JP ;
Wickaksana, D ;
Parrette, J ;
Kingon, AI .
JOURNAL OF MATERIALS RESEARCH, 2002, 17 (07) :1571-1579