Dielectric properties of random and ⟨100⟩ oriented SrTiO3 and (Ba,Sr)TiO3 thin films fabricated on ⟨100⟩ nickel tapes

Properties are presented for random and enhanced <100> orientation SrTiO3 and BaxSr1-xTiO3 (x=0.33, 0.50, and 0.67) films fabricated on base-metal <100> Ni tapes using a chemical solution deposition approach. Films were crystallized in a reducing atmosphere, which prevented Ni oxidation, but permitted growth of SrTiO3 and BaxSr1-xTiO3 films with dielectric loss tan delta between 0.003 and 0.015. For randomly oriented BaxSr1-xTiO3 (x=0, 0.33, 0.5, and 0.67) films, zero-field 100 kHz dielectric constants ranged from 250 to 420. Films with enhanced <100> orientation exhibited zero-field dielectric constants of 980 to 1500, three times higher than random films. Development of such high dielectric constants on Ni suggests a future method for inexpensive, high performance base-metal electrode capacitor fabrication.