Reaction kinetics of CuGaSe2 formation from a GaSe/CuSe bilayer precursor film

被引：37

作者：

Kim, W. K. ^{[1
]}

Payzant, E. A. ^{[2
]}

Kim, S. ^{[1
]}

Speakman, S. A. ^{[2
]}

Crisalle, O. D. ^{[1
]}

Anderson, T. J. ^{[1
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 12期

关键词：

growth models; X-ray diffraction; copper gallium diselenide; solar cells;

D O I：

10.1016/j.jcrysgro.2008.01.034

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The reaction pathway and kinetics of CuGaSe2 formation were investigated by monitoring the phase evolution of temperature ramp annealed or isothermally soaked bilayer glass/GaSe/CuSe precursor film using time-resolved, in situ high-temperature X-ray diffraction. Bilayer GaSe/CuSe precursor films were deposited on alkali-free thin glass substrates in a migration-enhanced epitaxial deposition system. The initial CuSe phase begins to transform to beta-Cu2-xSe at around 230 degrees C, followed by CuGaSe2 formation accompanied by a decrease in the beta-Cu2-xSe peak intensity at around 260 degrees C. Both the parabolic and Avrami diffusion-controlled reaction models represented the experimental data very well over the entire temperature range (280-370 degrees C) of the set of isothermal experiments with estimated activation energies of 115(+/- 16) and 124( +/- 19)kJ/mol, respectively. Transmission electron microscopy-energy-dispersive X-ray spectrometry (TEM-EDS) analysis suggests that CuGaSe2 forms at the interface of the initial GaSe and CuSe lacers. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：2987 / 2994

页数：8

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