Shaped crystal growth of 50 cm diameter silicon thin-walled cylinders by edge-defined film-fed growth (EFG)

被引：7

作者：

Garcia, D ^{[1
]}

Ouellette, M ^{[1
]}

Mackintosh, B ^{[1
]}

Kalejs, JP ^{[1
]}

机构：

[1] ASE Amer Inc, Billerica, MA 01821 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 225卷 / 2-4期

关键词：

stresses; edge-defined film-fed growth; semiconducting silicon; solar cells;

D O I：

10.1016/S0022-0248(01)00954-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A system for growth of 50 cm diameter hollow cylindrical silicon crystals by the edge-defined film-fed growth (EFG) technique has been designed and constructed. Cylinders were grown with lengths up to 1.2m and wall thicknesses ranging from 75 to 300 mum. Growth speed limits, effects of stress and material chacteristics of the cylinders were investigated to evaluate the potential of large diameter EFG systems to provide increased productivity for silicon wafer manufacture. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：566 / 571

页数：6

共 11 条

[1]

BELL R, COMMUNICATION

[2] THE GROWTH OF SILICON TUBES BY THE EFG PROCESS [J].