STRESS IN THIN HOLLOW SILICON CYLINDERS GROWN BY THE EDGE-DEFINED FILM-FED GROWTH TECHNIQUE

被引：13

作者：

KALEJS, JP ^{[1
]}

MENNA, AA ^{[1
]}

STORMONT, RW ^{[1
]}

HUTCHINSON, JW ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 104卷 / 01期

关键词：

D O I：

10.1016/0022-0248(90)90301-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Stress behavior is investigated in thin hollow silicon cylinders grown by the edge-defined film-fed growth (EFG) technique. Significant reductions in dislocation density to levels below those typical in ribbon or hollow polygon EFG sheet are observed, but are accompanied by higher residual stresses. A model to predict thermoelastic stresses resulting during growth of a cylinder is presented and the actions of stress components producing creep and residual stress are identified from dislocation and fracture patterns in 15 cm diameter cylinders. © 1990.

引用

页码：14 / 19

页数：6

共 7 条

[1] THE GROWTH OF SILICON TUBES BY THE EFG PROCESS [J].