LONG NONAGONS - AN APPROACH TO HIGH PRODUCTIVITY SILICON SHEET USING THE EFG METHOD

被引：17

作者：

TAYLOR, AS

MACKINTOSH, BH

ERISS, L

WALD, FV

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 82卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(87)90177-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：134 / 141

页数：8

共 17 条

[1]

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[2] HIGH-SPEED GROWTH OF SHEET CRYSTALS [J].

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[3] THE GROWTH OF SILICON TUBES BY THE EFG PROCESS [J].

ERISS, L ;

STORMONT, RW ;

SUREK, T ;

TAYLOR, AS .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) :200-211

[4] COMPARISON OF FINITE-ELEMENT CALCULATIONS AND EXPERIMENTAL MEASUREMENTS IN EDGE-DEFINED FILM-FED GROWTH OF SILICON SHEETS [J].

ETTOUNEY, HM ;

KALEJS, JP ;

BROWN, RA .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :306-313

[5]

HANOKA JI, 1983, APPL PHYS LETT, V42, P613

[6] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .1. -SAPPHIRE FILAMENTS [J].

LABELLE, HE ;

MLAVSKY, AI .

MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :571-&

[7] EFG, THE INVENTION AND APPLICATION TO SAPPHIRE GROWTH [J].

LABELLE, HE .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) :8-17

[8] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .2. EDGE-DEFINED, FILM-FED GROWTH (EFG) [J].

LABELLE, HE .

MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :581-&

[9]

LABELLE HE, 1971, MATER RES B, V6, P681

[10]

Mackintosh B. H., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P350

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