Bulk Heterojunction Formation between Indium Tin Oxide Nanorods and CuInS2 Nanoparticles for Inorganic Thin Film Solar Cell Applications

被引：35

作者：

Cho, Jin Woo ^{[2
,3
]}

Park, Se Jin ^{[2
]}

Kim, Jaehoon ^{[2
]}

Kim, Woong ^{[3
]}

Park, Hoo Keun ^{[1
]}

Do, Young Rag ^{[1
]}

Min, Byoung Koun ^{[2
]}

机构：

[1] Kookmin Univ, Dept Chem, Seoul 136702, South Korea

[2] Korea Inst Sci & Technol, Clean Energy Res Ctr, Seoul 136791, South Korea

[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2012年 / 4卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

bulk heterojunction; indium tin oxide; ITO; nanorods; CuInS2; solar cells; POLYMER PHOTOVOLTAIC CELLS; NANOCRYSTAL INKS; EFFICIENCIES; DEPOSITION; GROWTH; DEVICE;

D O I：

10.1021/am201524z

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, we developed a novel inorganic thin film solar cell configuration in which bulk heterojunction was formed between indium tin oxide (ITO) nanorods and CuInS2 (CIS). Specifically, ITO nanorods were first synthesized by the radio frequency magnetron sputtering deposition method followed by deposition of a dense TiO2 layer and CdS buffer layer using atomic layer deposition and chemical bath deposition method, respectively. The spatial region between the nanorods was then filled with CIS nanoparticle ink, which was presynthesized using the colloidal synthetic method. We observed that complete gap filling was achieved to form bulk heterojunction between the inorganic phases. As a proof-of-concept, solar cell devices were fabricated by depositing an Au electrode on top of the CIS layer, which exhibited the best photovoltaic response with a V-oc, J(sc), FF, and efficiency of 0.287 V, 9.63 mA/cm(2), 0.364, and 1.01%, respectively.

引用

页码：849 / 853

页数：5

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