Photovoltaic effect and charge storage in single ZnO nanowires

被引:68
作者
Liao, Zhi-Min [1 ]
Xu, Jun [2 ]
Zhang, Jing-Min [2 ]
Yu, Da-Peng [1 ,2 ]
机构
[1] Peking Univ, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
Nanowires - II-VI semiconductors - Zinc oxide - Schottky barrier diodes;
D O I
10.1063/1.2957470
中图分类号
O59 [应用物理学];
学科分类号
摘要
Asymmetric Schottky barriers between ZnO nanowire and metal electrode have been fabricated at the two ends of the nanowire. An obvious photocurrent generated from the device at zero voltage bias can be switched on/off with quick response by controlling the light irradiation. Moreover, the device can still afford a current at zero bias after switching off light illumination, which is ascribed to the charge storage effect in single ZnO nanowires. The underlying mechanisms related to the photovoltaic effect and charge storage were discussed. (C) 2008 American Institute of Physics.
引用
收藏
页数:3
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