Negative bias temperature instabilities in HfSiON/TaN-based pMOSFETs

被引：16

作者：

Houssa, M ^{[1
]}

Aoulaiche, M ^{[1
]}

Van Elshocht, S ^{[1
]}

De Gendt, S ^{[1
]}

Groeseneken, G ^{[1
]}

Heyns, MM ^{[1
]}

机构：

[1] IMEC, B-3001 Heverlee, Belgium

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative bias temperature instabilities (NBTI) in devices with SiOx/HfSiON stacks and TaN gates is reported, -for different SiO2/HfO2 compositions, for stacks with same physical thickness (t(phys)) and same equivalent oxide thickness (EOT). It is shown that V,h shifts increase with time like power laws, DeltaV(th)=At-alpha, like in SiO2 and SiON-based devices. When comparing DeltaV(th) shifts for same tphys, it is found that NBTI increases with increased HfO2 content. On the other hand, comparison of V-th shifts for devices with comparable EOT indicates that an optimal HfO2 content, -around 53%, results in minimal NBTI. These results can be qualitatively explained by the reaction-diffusion model. The power law exponent alpha is shown to decrease with increasing amount of HfO2. This finding has an important impact on the extrapolation of the device lifetime at operating conditions, which is found to be similar for layers with HfO2 compositions in the range 53-100 %.

引用

页码：121 / 124

页数：4

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