A comprehensive framework for predictive modeling of negative bias temperature instability

被引：294

作者：

Chakravarthi, S ^{[1
]}

Krishnan, AT ^{[1
]}

Reddy, V ^{[1
]}

Machala, CF ^{[1
]}

Krishnan, S ^{[1
]}

机构：

[1] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75243 USA

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A quantitative model is developed for the first time, that comprehends all the unique characteristics of NBTI degradation. Several models are critically examined to develop a reaction/diffusion based modeling framework for predicting interface state generation during NBTI stress. NBTI degradation is found to be dominated by diffusion of neutral atomic and molecular hydrogen related defects. Additionally, the presence of hydrogen gettering sites such as unsaturated grain boundaries significantly enhance NBTI degradation, whereas hydrogen sources reduce NBTI degradation. The model also suggests the possible mechanisms for saturation. The model is calibrated over a range of stress temperatures and voltages. The model captures recovery, experimental delay and frequency effects successfully.

引用

页码：273 / 282

页数：10

共 20 条

[1]

Alam M., 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537), P30, DOI 10.1109/IWGI.2001.967542

[2] MECHANISM OF NEGATIVE-BIAS-TEMPERATURE INSTABILITY [J].

BLAT, CE ;

NICOLLIAN, EH ;

POINDEXTER, EH .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) :1712-1720

[3] KINETICS OF H-2 PASSIVATION OF PB CENTERS AT THE (111) SI-SIO2 INTERFACE [J].

BROWER, KL .

PHYSICAL REVIEW B, 1988, 38 (14) :9657-9666

[4]

CHAKRAVARTHI S, 2003, INT C SIM SEM P DEV, P159

[5] Dynamic NBTI of pMOS transistors and its impact on device lifetime [J].

Chen, G ;

Chuah, KY ;

Li, MF ;

Chan, DS ;

Ang, CH ;

Zheng, JZ ;

Jin, Y ;

Kwong, DL .

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, :196-202

[6] Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductor field-effect transistors [J].

Ershov, M ;

Saxena, S ;

Karbasi, H ;

Winters, S ;

Minehane, S ;

Babcock, J ;

Lindley, R ;

Clifton, P ;

Redford, M ;

Shibkov, A .

APPLIED PHYSICS LETTERS, 2003, 83 (08) :1647-1649

[7] FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACES [J].

GOETZBER.A ;

LOPEZ, AD ;

STRAIN, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :90-96

[8] BIAS-TEMPERATURE STRESS ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES AS COMPARED TO IONIZING IRRADIATION AND TUNNEL INJECTION [J].

HALLER, G ;

KNOLL, M ;

BRAUNIG, D ;

WULF, F ;

FAHRNER, WR .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1844-1850

[9] NEGATIVE BIAS STRESS OF MOS DEVICES AT HIGH ELECTRIC-FIELDS AND DEGRADATION OF MNOS DEVICES [J].

JEPPSON, KO ;

SVENSSON, CM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :2004-2014

[10] NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation [J].

Kimizuka, N ;

Yamaguchi, K ;

Imai, K ;

Iizuka, T ;

Liu, CT ;

Keller, RC ;

Horiuchi, T .

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :92-93

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