BIAS-TEMPERATURE STRESS ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES AS COMPARED TO IONIZING IRRADIATION AND TUNNEL INJECTION

被引：28

作者：

HALLER, G

KNOLL, M

BRAUNIG, D

WULF, F

FAHRNER, WR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.334196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1844 / 1850

页数：7

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