Dynamic NBTI of pMOS transistors and its impact on device lifetime

被引：142

作者：

Chen, G ^{[1
]}

Chuah, KY ^{[1
]}

Li, MF ^{[1
]}

Chan, DS ^{[1
]}

Ang, CH ^{[1
]}

Zheng, JZ ^{[1
]}

Jin, Y ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, SNDL, Singapore 119260, Singapore

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

D O I：

10.1109/RELPHY.2003.1197745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a new NBTI phenomenon for the first time for the p-MOSFETs with ultra thin gate oxides. We demonstrate that in a CMOS inverter circuit, the interface traps generated under the NBTI stressing in a p-MOSFET (corresponding to the "high" output state of the inverter) are subsequently passivated when the gate to drain voltage switches to positive (corresponding to the "low" output state of the inverter). As a result, it was found that this "Dynamic" NBTI (DNBTI) operating in a CMOS inverter circuit prolongs significantly the device lifetime while the conventional "static" NBTI (SNBTI) underestimates the device lifetime. Furthermore, the DNBTI effect is dependent of temperature and gate oxide thickness, however independent of operation frequency. A physical model is proposed for DNBTI that involves the interaction between hydrogen and silicon dangling bonds. This finding has significant impact on the determination of maximum operation voltage as well as lifetime projection for future scaling of CMOS devices.

引用

页码：196 / 202

页数：7

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