Reduction of interface traps in p-channel MOS transistors during channel-hot-hole stress

被引：13

作者：

Han, KM ^{[1
]}

Sah, CT ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 06期

关键词：

channel hot carrier stress; DCIV methodology; MOS transistors; reliability;

D O I：

10.1109/16.678584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reduction of the interface trap density over the p-channel of MOS transistors during channel hot hole stress is observed from DCIV measurements. A proposed model consists of hydrogenation of the residual interfacial bonds by hydrogen and the hydrogen is released from the hydrogenated boron in the p(+)drain region by the channel hot holes.

引用

页码：1380 / 1382

页数：3

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