Controlled structure of gallium oxide nanowires

被引:96
作者
Chun, HJ
Choi, YS
Bae, SY
Seo, HW
Hong, SJ
Park, J [1 ]
Yang, H
机构
[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea
[2] Korea Univ, Dept Chem, Seoul 136701, South Korea
[3] Hanyang Univ, Coll Engn Sci, Ansan 425791, South Korea
关键词
D O I
10.1021/jp034728o
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Gallium oxide nanowires were synthesized via chemical vapor deposition of gallium/gallium oxide mixture and oxygen. The diameter of the nanowires is 30-80 nm with an average value of 50 nm. They consist of single-crystalline monoclinic crystal. While the nanowires grown without catalyst exhibit a significant planar defect, the nanowires grown with nickel catalytic nanopaticles are almost defect-free. The growth direction of the nanowires grown without the catalyst is uniformly [010]. In contrast, the nanowires grown with the catalyst have random growth direction. X-ray diffraction, Raman spectroscopy, and photoluminescence are well correlated with the structural characteristics of the nanowires. The result provides an evidence for the catalyst effect in controlling the structure of nanowires.
引用
收藏
页码:9042 / 9046
页数:5
相关论文
共 29 条
  • [1] Origin of the blue luminescence of β-Ga2O3
    Binet, L
    Gourier, D
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1998, 59 (08) : 1241 - 1249
  • [2] Choi YC, 2000, ADV MATER, V12, P746, DOI 10.1002/(SICI)1521-4095(200005)12:10<746::AID-ADMA746>3.0.CO
  • [3] 2-N
  • [4] Gallium oxide nanoribbons and nanosheets
    Dai, ZR
    Pan, ZW
    Wang, ZL
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (05) : 902 - 904
  • [5] RAMAN-SPECTRA AND VALENCE FORCE-FIELD OF SINGLE-CRYSTALLINE BETA-GA2O3
    DOHY, D
    LUCAZEAU, G
    REVCOLEVSCHI, A
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 1982, 45 (02) : 180 - 192
  • [6] A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system
    Edwards, DD
    Mason, TO
    Goutenoire, F
    Poeppelmeier, KR
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (13) : 1706 - 1708
  • [7] PRESSURE OF GA2O OVER GALLIUM-GA2O3 MIXTURES
    FROSCH, CJ
    THURMOND, CD
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1962, 66 (05) : 877 - &
  • [8] FROSCH CJ, 1958, J PHYS CHEM, V62, P611
  • [9] Synthesis, Raman scattering and defects of β-Ga2O3 nanorods
    Gao, YH
    Bando, Y
    Sato, T
    Zhang, YF
    Gao, XQ
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (12) : 2267 - 2269
  • [10] Nanowires, nanobelts and related nanostructures of Ga2O3
    Gundiah, G
    Govindaraj, A
    Rao, CNR
    [J]. CHEMICAL PHYSICS LETTERS, 2002, 351 (3-4) : 189 - 194