Density of gap states in amorphous hydrogenated silicon carbide determined using high-frequency capacitance-voltage measurement technique

被引：4

作者：

Chew, K ^{[1
]}

Rusli ^{[1
]}

Yu, MB ^{[1
]}

Yoon, SF ^{[1
]}

Ligatchev, V ^{[1
]}

Ahn, J ^{[1
]}

机构：

[1] Nanyang Technol Univ, Ctr Microelect, Singapore 639798, Singapore

来源：

关键词：

amorphous silicon carbon alloys; density of states (DOS); band structure; heterojunction;

D O I：

10.1016/S0925-9635(00)00362-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The density of gap states distribution of amorphous hydrogenated silicon carbide films grown with ECR-CVD was investigated with the high-frequency (1 MHz) capacitance-voltage measurement technique. The mid-gap density near the Fermi level was found to be 3 X 10(15) cm(-3) eV(-1), and rose exponentially towards the valence band. The energy band diagram for the a-SiC:H/n-type c-Si (N-d = 2.8 x 10(15) cm(-3)) heterostructure at zero bias was also proposed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1273 / 1277

页数：5

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