SILICON HBT WITH A LOW-RESISTIVITY AMORPHOUS SICX EMITTER

被引：7

作者：

KUWAGAKI, M

IMAI, K

OGINO, T

AMEMIYA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 02期

关键词：

D O I：

10.1143/JJAP.28.L173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L173 / L175

页数：3

共 8 条

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[2]

RAHMAN MM, 1984, JPN J APPL PHYS 1, V23, P515, DOI 10.1143/JJAP.23.515

[3]

SAKAI T, 1985, 17TH C SOL STAT DEV, P373

[4]

Sasaki K., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P186, DOI 10.1109/IEDM.1987.191383

[5]

SASAKI K, 1985, 1985 IEDM WASH, P294

[6] BETA-SIC/SI HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAIN [J].

SUGII, T ;

ITO, T ;

FURUMURA, Y ;

DOKI, M ;

MIENO, F ;

MAEDA, M .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :87-89

[7]

Sugii T., 1986, 1986 Symposium on VLSI Technology. Digest of Technical Papers, P45

[8]

TABE M, 1986, 18TH C SOL STAT DEV, P37

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