GAP-STATE MEASUREMENTS ON DIAMOND-LIKE CARBON-FILMS

被引：17

作者：

MANDEL, T ^{[1
]}

FRISCHHOLZ, M ^{[1
]}

HELBIG, R ^{[1
]}

HAMMERSCHMIDT, A ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV,D-91050 ERLANGEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 26期

关键词：

D O I：

10.1063/1.111955

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high frequency capacitance-voltage method is used to measure the electronic gap-state density in diamond-like carbon (DLC) films. The gap-state density is derived from the analysis of high frequency capacitance-voltage characteristics of DLC on crystalline silicon (c-Si) heterojunctions. Near the Fermi level the gap-state density in the DLC thin film is obtained of the order 10(16) cm-3 eV-1. Furthermore, the energy-band diagram of a DLC/c-Si heterojunction is evaluated, and the work function of DLC is derived to be 3.6 eV

引用

页码：3637 / 3639

页数：3

共 8 条

[1]

KAPPOR VJ, 1986, J VACUUM SCI TECHN A, V4, P1013

[2] INTERFACIAL EFFECTS DUE TO TUNNELING TO INSULATOR GAP STATES IN AMORPHOUS-CARBON ON SILICON METAL-INSULATOR-SEMICONDUCTOR STRUCTURES [J].