INTERFACIAL EFFECTS DUE TO TUNNELING TO INSULATOR GAP STATES IN AMORPHOUS-CARBON ON SILICON METAL-INSULATOR-SEMICONDUCTOR STRUCTURES

被引：34

作者：

KHAN, AA

WOOLLAM, JA

CHUNG, Y

机构：

[1] UNIV NEBRASKA,DEPT ELECT ENGN,LINCOLN,NE 68588

[2] UNIVERSAL ENERGY SYST,DAYTON,OH 45432

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.333040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4299 / 4303

页数：5

共 21 条

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