GAP-STATES MEASUREMENT OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS-SILICON - HIGH-FREQUENCY CAPACITANCE-VOLTAGE METHOD

被引：21

作者：

SASAKI, G

FUJITA, S

SASAKI, A

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1013 / 1017

页数：5

共 14 条

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