GAP-STATES MEASUREMENT OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS-SILICON - HIGH-FREQUENCY CAPACITANCE-VOLTAGE METHOD

被引：21

作者：

SASAKI, G

FUJITA, S

SASAKI, A

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan

来源：

关键词：

D O I：

10.1063/1.330510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1013 / 1017

页数：5

共 14 条

[11] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

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[12]

Spear W. E., 1972, Journal of Non-Crystalline Solids, V8-10, P727, DOI 10.1016/0022-3093(72)90220-7

[13] INTERNAL PHOTOEMISSION IN HYDROGENATED AMORPHOUS-SI FILMS [J].

WRONSKI, CR ;

ABELES, B ;

CODY, GD ;

TIEDJE, T .

WRONSKI, CR ;

CARLSON, DE ;

DANIEL, RE .