Depth profiling of ultrashallow implanted P using NRA

被引：5

作者：

Kobayashi, H ^{[1
]}

Gibson, WM ^{[1
]}

机构：

[1] SUNY Albany, Dept Phys, Albany, NY 12222 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 152卷 / 2-3期

关键词：

depth profile; ultrashallow; phosphorus; silicon; NRA; SIMS;

D O I：

10.1016/S0168-583X(99)00182-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Depth profiles of ultrashallow implanted P in Si at a dose of 3 x 10(14) cm(-2) in the energy range of 5-80 keV were investigated by nuclear reaction analysis (NRA) using a P-31(alpha,p)S-34 reaction. Both projected ranges (R-p) and range straggling (Delta R-p) are in good agreement with those calculated by TRIM. The accuracy of the dose measurement including reproducibility of this method is better than +/-5%. This method is very useful to improve the quantitative accuracy in ultrashallow depth profiling of P in combination with SIMS. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：365 / 369

页数：5

共 11 条

[1]

[Anonymous], 1995, Handbook of Modern Ion Beam Material Analysis

[2]

BENNINGHOVEN A, 1987, 2 ION MASS SPECTROME

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