DOSE LOSS IN PHOSPHORUS IMPLANTS DUE TO TRANSIENT DIFFUSION AND INTERFACE SEGREGATION

被引：57

作者：

GRIFFIN, PB

CROWDER, SW

KNIGHT, JM

机构：

[1] Center for Integrated Systems, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.114543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For implanted phosphorus in the dose range of 5x10(13)/cm(2)-4x10(14)/cm(2), up to half the implanted dose may be lost during low thermal budget anneals due to transient diffusion and anomalous segregation at the Si-SiO2 interface. The phosphorus atoms, rendered mobile by the implant damage, stick in the oxide near the interface where they are electrically inactive and can be removed by stripping the surface oxide. Such a dose loss needs to be accounted for in a typical device fabrication process. (C) 1995 American Institute of Physics.

引用

页码：482 / 484

页数：3

共 11 条

[1]

BARTON RW, 1992, THESIS STANFORD U

[2]

GRIFFIN P, UNPUB

[3] A MODEL FOR PHOSPHORUS SEGREGATION AT THE SILICON SILICON DIOXIDE INTERFACE [J].