Insulator-to-metal transition in ZnO by electric double layer gating

被引：160

作者：

Shimotani, Hidekazu

Asanuma, Haruhiko

Tsukazaki, Atsushi

Ohtomo, Akira

Kawasaki, Masashi

Iwasa, Yoshihiro

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] CREST, Japan Sci Technol Agcy, Kawaguchi 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 08期

关键词：

D O I：

10.1063/1.2772781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall effect measurements showed that a sheet carrier density of 4.2x10(13) cm(-2) was achieved. The highest sheet conductance at room temperature was similar to 1 mS, which was sufficient to maintain the metallic state down to 10 K. These results strongly suggest the versatility of electric double layer gating for various materials.

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页数：3

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