Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films

被引:263
作者
Yang, W [1 ]
Vispute, RD
Choopun, S
Sharma, RP
Venkatesan, T
Shen, H
机构
[1] Univ Maryland, Dept Phys, CSR, College Pk, MD 20742 USA
[2] USA, Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA
[3] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD USA
[4] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA
关键词
D O I
10.1063/1.1368378
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the fabrication and characterization of visible blind ultraviolet photodetectors based on MgxZn1-xO. Using pulsed laser deposition technique, Mg0.34Zn0.66O thin films with a bandgap of 4.05 eV were epitaxially grown on c-plane sapphire substrates. The structural, electrical, and optical properties of epilayers were characterized using various techniques. Based on the Mg0.34Zn0.66O films, planar geometry photconductive type metal-semiconductor-metal photodetectors were fabricated. At a 5 V bias, a high responsivity of 1200 A/W was achieved at 308 nm, and the visible rejection (R308 nm/R400 nm) was more than four orders of magnitude. The 10%-90% rise and fall time were 8 ns and 1.4 mus, respectively. (C) 2001 American Institute of Physics.
引用
收藏
页码:2787 / 2789
页数:3
相关论文
共 14 条
  • [1] Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire
    Choopun, S
    Vispute, RD
    Noch, W
    Balsamo, A
    Sharma, RP
    Venkatesan, T
    Iliadis, A
    Look, DC
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (25) : 3947 - 3949
  • [2] FABRICIUS H, 1986, APPL OPTICS, V25, P2764, DOI 10.1364/AO.25.002764
  • [3] HIGH-RESPONSIVITY PHOTOCONDUCTIVE ULTRAVIOLET SENSORS BASED ON INSULATING SINGLE-CRYSTAL GAN EPILAYERS
    KHAN, MA
    KUZNIA, JN
    OLSON, DT
    VANHOVE, JM
    BLASINGAME, M
    REITZ, LF
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (23) : 2917 - 2919
  • [4] Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD
    Liu, Y
    Gorla, CR
    Liang, S
    Emanetoglu, N
    Lu, Y
    Shen, H
    Wraback, M
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (01) : 69 - 74
  • [5] Production and annealing of electron irradiation damage in ZnO
    Look, DC
    Reynolds, DC
    Hemsky, JW
    Jones, RL
    Sizelove, JR
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (06) : 811 - 813
  • [6] Room temperature ultraviolet laser emission from ZnO nanocrystal thin films grown by laser MBE
    Ohtomo, A
    Kawasaki, M
    Sakurai, Y
    Yoshida, Y
    Koinuma, H
    Yu, P
    Tang, ZK
    Wong, GKL
    Segawa, Y
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 54 (1-2): : 24 - 28
  • [7] MgxZn1-xO as a II-VI widegap semiconductor alloy
    Ohtomo, A
    Kawasaki, M
    Koida, T
    Masubuchi, K
    Koinuma, H
    Sakurai, Y
    Yoshida, Y
    Yasuda, T
    Segawa, Y
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (19) : 2466 - 2468
  • [8] Semiconductor ultraviolet detectors
    Razeghi, M
    Rogalski, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7433 - 7473
  • [9] Solar blind UV region and UV detector development objectives
    Schreiber, P
    Dang, T
    Pickenpaugh, T
    Smith, G
    Gehred, P
    Litton, C
    [J]. PHOTODETECTORS: MATERIALS AND DEVICES IV, 1999, 3629 : 230 - 248
  • [10] Sharma A. K., 2000, MRS SPRING 2000 M, P179