Thermal stability of Pd supported on single crystalline SiO2 thin films

被引：23

作者：

Min, BK ^{[1
]}

Santra, AK ^{[1
]}

Goodman, DW ^{[1
]}

机构：

[1] Texas A&M Univ, Dept Chem, College Stn, TX 77842 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 06期

关键词：

D O I：

10.1116/1.1617282

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of annealing temperature on a model Pd/SiO2 catalyst has been investigated using Auger electron spectroscopy (AES) and scanning tunneling microscopy. Pd clusters on a single crystalline SiO2 thin film are not altered with respect to size or shape upon heating to 700 K; however, interdiffusion and sintering of the Pd clusters take place between 750 and 1050 K. At 1000 K, AES data imply the formation of Pd-silicide. Above 1050 K, desorption of Pd occurs concomitant with the decomposition of SiO2. (C) 2003. American Vacuum Society.

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页码：2319 / 2323

页数：5

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