Synthesis, structure and optical properties of GaN nanocrystallites

被引：13

作者：

Nyk, M

Strek, W

Jablonski, JM

Kepinski, L

Kudrawiec, R

Misiewicz, J

机构：

[1] Polish Acad Sci, Inst Low Temp & Struct Res, PL-50950 Wroclaw, Poland

[2] Wroclaw Tech Univ, Inst Phys, PL-50370 Wroclaw, Poland

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2005年 / 8卷 / 04期

关键词：

GaN nanocrystallites; luminescence; Raman;

D O I：

10.1016/j.mssp.2004.07.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The novel simple method of GaN nanocrystallites synthesis is presented. Their structure and morphology was investigated. The average sizes of GaN nanocrystallites as determined from XRD and TEM measurements were ca.10nm. The Raman and photoluminescence spectra were measured and analyzed. It was found that the photoluminescence of GaN nanocrystallites exhibits the broad band with a maximum in the red at 650nm. This luminescence was strongly quenched with increasing temperature. (c) 2004 Elsevier Ltd. All rights reserved.

引用

页码：511 / 514

页数：4

共 16 条

[1] Electron energy loss studies of dislocations in GaN thin films [J].