Carrier recombination rates in narrow-gap InAs/Ga1-xInxSb-based superlattices

We present a comparison of theoretical calculations and experimental measurements of the Auger recombination rate in a narrow-gap semiconductor superlattice with a complex band structure. The calculations and measurements indicate that the rate depends on density as n(2) for low density, and changes to an n dependence when the electrons and holes become degenerate. The calculations are the first to incorporate superlattice umklapp processes, which contribute about half of the total rate and substantially improve the agreement with experiment. [S0163-1829(99)04203-4].