Si quantum dot formation with low-pressure chemical vapor deposition

被引:49
作者
Nakajima, A
Sugita, Y
Kawamura, K
Tomita, H
Yokoyama, N
机构
[1] Fujitsu Lab Ltd, Kanagawa
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 2B期
关键词
Si; quantum dot; LPCVD; optical absorption; TEM; EDX; Brownian migration;
D O I
10.1143/JJAP.35.L189
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a simple technique for fabricating a layer of isolated Si quantum dots. The procedure uses conventional low-pressure chemical vapor deposition (LPCVD) for an extremely short deposition time in the early stage of poly-Si film growth. The layer resulting from a deposition time of 60 s has isolated Si nanocrystals 5-20 nm in diameter and 2-10 nm in height. Optical absorption measurement shows that the Si-nanocrystal spectrum changes drastically and the onset of absorption shifts to higher energies compared to that of bulk Si. This shift can be explained by the energy gap widening caused by quantum size effects. Special attention is paid to the Brownian migration of Si nanocrystals for fabricating Si quantum dots.
引用
收藏
页码:L189 / L191
页数:3
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