SIRAD: an irradiation facility at the LNL Tandem accelerator for radiation damage studies on semiconductor detectors and electronic devices and systems

被引:110
作者
Wyss, J
Bisello, D
Pantano, D
机构
[1] Univ Padua, Ist Nazl Fis Nucl, Sezione Padova, Dipartimento Fis, I-35131 Padua, Italy
[2] Univ Cassino, Ist Nazl Fis Nucl, Sezione Pisa, Fac Ingn, Pisa, Italy
关键词
irradiation facility; protons; heavy ions; semiconductor devices;
D O I
10.1016/S0168-9002(01)00193-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This article describes the essential features of the SIRAD facility of the INFN Laboratori Nazionali di Legnaro. This facility, located at the 15 MV Tandem accelerator, is dedicated to radiation damage studies (bulk damage, total dose and Single Event Effects) induced by protons and heavy ions on semiconductor detectors, electronic devices and systems. SIRAD is at present routinely used by groups involved in detector development for elementary particle physics, in electronic device physics and in space applications. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:426 / 434
页数:9
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