The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs

被引：9

作者：

Bertilsson, K ^{[1
]}

Nilsson, HE

Hjelm, M

Petersson, CS

Käckell, P

Persson, C

机构：

[1] Mid Sweden Univ, Dept Informat Technol, S-85170 Sundsvall, Sweden

[2] KTH, Dept Solid State Elect, S-16440 Kista, Sweden

[3] Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany

[4] Linkoping Univ, Dept Phys & Measurement Technol, S-58182 Linkoping, Sweden

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 05期

关键词：

SiC; vertical MESFETs; device simulations;

D O I：

10.1016/S0038-1101(01)00127-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A full band Monte Carlo (MC) study of the high frequency performance of a 4H-SiC short channel vertical MESFET is presented. The MC model used is based on data from a full potential band structure calculation using the local density approximation to the density functional theory. The MC results have been compared with simulations using state of the art drift-diffusion and hydrodynamic transport models. Transport parameters such as mobility, saturation velocity and energy relaxation time are extracted from MC simulations. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：645 / 653

页数：9

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