High-performance ambipolar pentacene organic field-effect transistors on poly(vinyl alcohol) organic gate dielectric

被引：215

作者：

Singh, TB ^{[1
]}

Meghdadi, T

Günes, S

Marjanovic, N

Horowitz, G

Lang, P

Bauer, S

Sariciftci, NS

机构：

[1] Johannes Kepler Univ Linz, LIOS, A-4040 Linz, Austria

[2] Univ Densi Diderot, CNRS, UMR 7086, ITODYS, F-75005 Paris, France

[3] Johannes Kepler Univ Linz, SOMAP, A-4040 Linz, Austria

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 19期

关键词：

D O I：

10.1002/adma.200501109

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Growing organic semiconductors on S L dielectrics with different surface energies and dielectric constants results in striking changes of the film morphology (Figure, right). Ambipolar transport is reported in pentacene transistors on a PVA gate dielectric (left). The current-voltage characteristics correlate with capacitance-voltage investigations on metal-insulator-semiconductor structures.

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页码：2315 / +

页数：7

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