Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope

被引：44

作者：

Marchi, F

Bouchiat, V

Dallaporta, H

Safarov, V

Tonneau, D

Doppelt, P

机构：

[1] Fac Sci Luminy, UMR CNRS 6631, Grp Phys Etat Condenses, Dept Phys, F-13288 Marseille 09, France

[2] Ecole Super Phys & Chim Ind, Chim Inorgan Lab, F-75231 Paris, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an experimental study of growth of silicon oxide strips drawn on hydrogenated silicon under the voltage biased tip of an atomic force microscope operating in ambient atmosphere. Oxide formation was found to occur at negative tip biases above a voltage threshold around \-2\V, corresponding to the minimum electric field required for hydrogen removal from the substrate surface. We show the influence of tip-sample distance and of the chemical composition of the atmosphere on the growth. An ozone enriched atmosphere leads to a growth kinetics enhancement. (C) 1998 American Vacuum Society. [S0734-211X(98)06106-X].

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页码：2952 / 2956

页数：5

相关论文

共 28 条

[1] Selective area growth of metal nanostructures [J].

Adams, DP ;

Mayer, TM ;

Swartzentruber, BS .

APPLIED PHYSICS LETTERS, 1996, 68 (16) :2210-2212

[2] Atomic force microscope tip-induced local oxidation of silicon: Kinetics, mechanism, and nanofabrication [J].

Avouris, P ;

Hertel, T ;

Martel, R .

APPLIED PHYSICS LETTERS, 1997, 71 (02) :285-287

[3] MODIFICATION OF HF-TREATED SILICON (100) SURFACES BY SCANNING TUNNELING MICROSCOPY IN AIR UNDER IMAGING CONDITIONS [J].

BARNIOL, N ;

PEREZMURANO, F ;

AYMERICH, X .

APPLIED PHYSICS LETTERS, 1992, 61 (04) :462-464

[4] Lift-off lithography using an atomic force microscope [J].

Bouchiat, V ;

Esteve, D .

APPLIED PHYSICS LETTERS, 1996, 69 (20) :3098-3100

[5] FABRICATION OF NANOMETER-SCALE SIDE-GATED SILICON FIELD-EFFECT TRANSISTORS WITH AN ATOMIC-FORCE MICROSCOPE [J].

CAMPBELL, PM ;

SNOW, ES ;

MCMARR, PJ .

APPLIED PHYSICS LETTERS, 1995, 66 (11) :1388-1390

[6] ENHANCEMENT IN THERMAL-OXIDATION OF SILICON BY OZONE [J].

CHAO, SC ;

PITCHAI, R ;

LEE, YH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (09) :2751-2752

[7]

COMMANDRE M, 1981, THESIS U MARSEILLES

[8] Understanding scanned probe oxidation of silicon [J].

Dagata, JA ;

Inoue, T ;

Itoh, J ;

Yokoyama, H .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :271-273

[9] MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].

DAGATA, JA ;

SCHNEIR, J ;

HARARY, HH ;

EVANS, CJ ;

POSTEK, MT ;

BENNETT, J .

APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003

[10] ELECTRON-ENERGY LOSS SPECTROSCOPY OF H-TERMINATED SI(111) AND SI(100) PREPARED BY CHEMICAL ETCHING [J].

DUMAS, P ;

CHABAL, YJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :2160-2165