Persistent step-flow growth of strained films on vicinal substrates

被引:120
作者
Hong, W [1 ]
Lee, HN
Yoon, M
Christen, HM
Lowndes, DH
Suo, ZG
Zhang, ZY
机构
[1] Harvard Univ, Sch Med, Div Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA
[3] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
关键词
D O I
10.1103/PhysRevLett.95.095501
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We propose a model of persistent step flow, emphasizing dominant kinetic processes and strain effects. Within this model, we construct a morphological phase diagram, delineating a regime of step flow from regimes of step bunching and island formation. In particular, we predict the existence of concurrent step bunching and island formation, a new growth mode that competes with step flow for phase space, and show that the deposition flux and temperature must be chosen within a window in order to achieve persistent step flow. The model rationalizes the diverse growth modes observed in pulsed laser deposition of SrRuO3 on SrTiO3.
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页数:4
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