Strategies for high rate reactive sputtering

被引：13

作者：

Nadel, SJ ^{[1
]}

Greene, P ^{[1
]}

机构：

[1] BOC Coating Technol, Fairfield, CA 94533 USA

来源：

THIN SOLID FILMS | 2001年 / 392卷 / 02期

关键词：

deposition process; sputtering; titanium oxide;

D O I：

10.1016/S0040-6090(01)01024-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High rate reactive sputtering of heavily insulating dielectrics such as Si3N4 and TiO2 is a key requirement for economic production of complex coating designs. Two approaches for achieving enhanced deposition rates for TiO2 are contrasted. The use of closed loop process control through plasma emission monitoring has been demonstrated utilizing both DC and mid-frequency AC sputtering sources. Alternatively, high rate deposition of TiO2 has been demonstrated via deposition from a sub-stoichiometric ceramic TiO2 target, also utilizing DC and AC deposition. The use of mid-frequency AC is required to eliminate deposition non-uniformity due to insulating build up on anode surfaces. Data on deposition speeds, optical properties, long term deposition rate and uniformity stability are presented for both processes. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：174 / 183

页数：10

共 11 条

[1] PREDICTING THIN-FILM STOICHIOMETRY IN REACTIVE SPUTTERING [J].

BERG, S ;

LARSSON, T ;

NENDER, C ;

BLOM, HO .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :887-891

[2]

GREENE P, 2000, 43 ANN TECHN C P SOC, P127

[3]

GREENE P, 1999, 42 ANN TECHN C P SOC, P23

[4] The use of ac power on cylindrical magnetrons [J].

Hill, RJ ;

Jansen, F .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 218 :35-37

[5]

HILL RJ, 1998, 41 ANN TECHN C P SOC, P97

[6]

LEHAN J, 1998, Patent No. 5814195

[7]

McKelvey H. E., 1982, United States Patent, Patent No. [4,356,073, 4356073]

[8] High rate sputter deposition of TiO2 from TiO2-x target [J].

Ohsaki, H ;

Tachibana, Y ;

Hayashi, A ;

Mitsui, A ;

Hayashi, Y .

THIN SOLID FILMS, 1999, 351 (1-2) :57-60

[9]

STUMPFEL J, 1997, 40 ANN TECHN C P SOC, P179

[10]

SZCYRBOWSKI J, 1995, 38 ANN TECHN C P SOC, P389

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