Radiation hardness of silicon detectors for high-energy physics applications

被引：23

作者：

Candelori, A ^{[1
]}

Bisello, D

Rando, R

Kaminski, A

Wyss, J

Litovchenko, A

Betta, GD

Lozano, M

Boscardin, M

Martínez, C

Ullán, M

Zorzi, N

机构：

[1] Univ Padua, Dipartimento Fis, Ist Nazl Fis Nucl, I-35131 Padua, Italy

[2] Univ Cassino, Fac Ingn, I-03043 Cassino, FR, Italy

[3] Ist Nazl Fis Nucl, I-56010 Pisa, Italy

[4] Univ Trent, Dipartimento Informat & Telecomun, I-38050 Povo, TN, Italy

[5] Univ Autonoma Barcelona, Ctr Nacl Microelect, E-08193 Bellaterra, Barcelona, Spain

[6] IRST, ITC, Div Microsistemi, I-38050 Povo, TN, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 04期

关键词：

diodes; neutron radiation effects; oxygenation; proton radiation effects; radiation detectors;

D O I：

10.1109/TNS.2003.814573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxygenated and standard (not oxygenated) silicon diodes processed by CNM and IRST have been irradiated by 27 MeV protons and compared with standard devices from ST Microelectronics. As expected, the leakage current density increase rate (a) and its annealing do not show any significant dependence on starting material, oxygenation and/or device processing. On the contrary, oxygenation improves the radiation hardness by decreasing the acceptor introduction rate (beta) and mitigating the depletion voltage (V-dep) increase, with the beta parameter depending also on starting material and/or effects related to device processing for standard diodes. Finally, these results are included in a general review on the state of the art for silicon detector radiation hardening, confirming the good performance of the considered technologies.

引用

页码：1121 / 1128

页数：8

共 25 条

[1] TEMPERATURE EFFECTS ON RADIATION-DAMAGE TO SILICON DETECTORS [J].

BARBERIS, E ;

BOISSEVAIN, JG ;

CARTIGLIA, N ;

ELLISON, JA ;

FERGUSON, P ;

FLEMING, JK ;

HOLZSCHEITER, K ;

JERGER, S ;

JOYCE, D ;

KAPUSTINSKY, JS ;

LESLIE, J ;

LIETZKE, C ;

MATTHEWS, JAJ ;

PALOUNEK, APT ;

PITZL, D ;

ROWE, WA ;

SADROZINSKI, HFW ;

SKINNER, D ;

SOMMER, WF ;

SONDHEIM, WE ;

WIMPENNY, SJ ;

ZIOCK, HJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2) :373-380

[2] Neutron irradiation effects on standard and oxygenated silicon diodes [J].

Bisello, D ;

Candelori, A ;

Kaminski, A ;

Pantano, D ;

Rando, R ;

Wyss, J ;

Andrighetto, A ;

Cindro, V .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (03) :1027-1034

[3] Proton irradiation effects on standard and oxygenated silicon diodes [J].

Bisello, D ;

Bacchetta, N ;

Candelori, A ;

Kaminski, A ;

Pantano, D ;

Rando, R ;

Stavitski, I ;

Wyss, J .

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 :477-482

[4] Radiation damage of standard and oxygenated silicon diodes irradiated by 16-MeV and 27-MeV protons [J].

Bisello, D ;

Wyss, J ;

Candelori, A ;

Kaminsky, A ;

Pantano, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (04) :1020-1027

[5] Low- and high-energy proton irradiations of standard and oxygenated silicon diodes [J].

Candelori, A ;

Rando, R ;

Bisello, D ;

Bacchetta, N ;

Kaminski, A ;

Pantano, D ;

Stavitski, I ;

Wyss, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) :2270-2277

[6]

CANDELORI A, 2002, P 9 EUR S SEM DET SC

[7] Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon. [J].

Casse, G ;

Allport, PP ;

Hanlon, M .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (03) :527-532

[8]

*CERN LHCC, 2002, 2002003 CERN LHCC

[9] RADIATION STUDIES AND OPERATIONAL PROJECTIONS FOR SILICON IN THE ATLAS INNER DETECTOR [J].

CHILINGAROV, A ;

FEICK, H ;

FRETWURST, E ;

LINDSTROM, G ;

ROE, S ;

SCHULZ, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1995, 360 (1-2) :432-437

[10] The effect of oxygen impurities on radiation hardness of FZ silicon detectors for HEP after neutron, proton and gamma irradiation [J].

Dezillie, B ;

Li, Z ;

Eremin, V ;

Chen, W ;

Zhao, LJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) :1892-1897

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