Device modeling of long-channel nanotube electro-optical emitter

被引：44

作者：

Tersoff, J ^{[1
]}

Freitag, M ^{[1
]}

Tsang, JC ^{[1
]}

Avouris, P ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 26期

关键词：

D O I：

10.1063/1.1957116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a simple analytic model of long single-wall nanotube electro-optical emitters, along with experimental measurements using improved devices with reduced hysteresis. The model describes well the voltage-controlled motion of the emission spot, and provides a clear picture of the physical mechanism of device operation. It also indicates that the electric field is strongly enhanced at the emission spot, and that device performance can be greatly improved by the use of thinner gate oxides. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 10 条

[1]

*EPAPS, EAPPLAB87035527 EPAP

[2] Mobile ambipolar domain in carbon-nanotube infrared emitters [J].

Freitag, M ;

Chen, J ;

Tersoff, J ;

Tsang, JC ;

Fu, Q ;

Liu, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2004, 93 (07) :076803-1

[3] Hot carrier electroluminescence from a single carbon nanotube [J].

Freitag, M ;

Perebeinos, V ;

Chen, J ;

Stein, A ;

Tsang, JC ;

Misewich, JA ;

Martel, R ;

Avouris, P .

NANO LETTERS, 2004, 4 (06) :1063-1066

[4] Carrier transport and light-spot movement in carbon-nanotube infrared emitters [J].

Guo, J ;

Alam, MA .

APPLIED PHYSICS LETTERS, 2005, 86 (02) :023105-1

[5] Carbon nanotubes as Schottky barrier transistors [J].

Heinze, S ;

Tersoff, J ;

Martel, R ;

Derycke, V ;

Appenzeller, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2002, 89 (10)

[6] Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors [J].

Heinze, S ;

Radosavljevic, M ;

Tersoff, J ;

Avouris, P .

PHYSICAL REVIEW B, 2003, 68 (23)

[7] Growth of millimeter-long and horizontally aligned single-walled carbon nanotubes on flat substrates [J].

Huang, SM ;

Cai, XY ;

Liu, J .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (19) :5636-5637

[8] Hysteresis caused by water molecules in carbon nanotube field-effect transistors [J].

Kim, W ;

Javey, A ;

Vermesh, O ;

Wang, O ;

Li, YM ;

Dai, HJ .

NANO LETTERS, 2003, 3 (02) :193-198

[9] Electrically induced optical emission from a carbon nanotube FET [J].

Misewich, JA ;

Martel, R ;

Avouris, P ;

Tsang, JC ;

Heinze, S ;

Tersoff, J .

SCIENCE, 2003, 300 (5620) :783-786

[10] Drain voltage scaling in carbon nanotube transistors [J].

Radosavljevic, M ;

Heinze, S ;

Tersoff, J ;

Avouris, P .

APPLIED PHYSICS LETTERS, 2003, 83 (12) :2435-2437

← 1 →