Carrier transport and light-spot movement in carbon-nanotube infrared emitters

被引:32
作者
Guo, J [1 ]
Alam, MA
机构
[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1848186
中图分类号
O59 [应用物理学];
学科分类号
摘要
Infrared emission from a carbon-nanotube (CNT) field-effect transistor, with the position of the light spot controlled by applied bias, was recently reported. In this letter, a self-consistent simulation, which couples a quantum treatment of the metal-CNT contacts to a semiclassical treatment of the channel, is performed to understand carrier transport and light emission in a CNT infrared emitter. The results show that when the channel is long, light emission significantly affects carrier transport, and reduces the source-drain current by a factor of 2 in ambipolar transport regime. The experimentally observed light-spot movement along the channel can be mostly understood and explained by a simple, semiclassical picture. (C) 2005 American Institute of Physics.
引用
收藏
页码:023105 / 1
页数:3
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