The effect of excess gallium vacancies in low-temperature GaAs/AlAs/GaAs:Si heterostructures

被引：19

作者：

Kisielowski, C

Calawa, AR

LilientalWeber, Z

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 01期

关键词：

D O I：

10.1063/1.362742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This article shows that the presence of low-temperature-grown GaAs (LT-GaAs) in LT-GaAs/A1As/ GaAs:Si heterostructures increases the Al/Ga interdiffusion at the heterostructure interfaces. The interdiffusion enhancement is attributed to the presence of Ca vacancies (V-Ga) in the As-rich LT-GaAs, which diffuses from a supersaturation of V-Ga frozen-in during sample growth. Chemical mapping, which distinguishes between the AlAs and GaAs lattices at an atomic scale, is used to measure the Al concentration gradient in adjacent GaAs:Si layers. A correlation is observed between the Al/Ga interdiffusion and the gate breakdown voltage in metal-insulator field-effect transistor structures containing LT-GaAs. (C) 1996 American Institute of Physics.

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页码：156 / 160

页数：5

相关论文

共 14 条

[1] INTERACTION OF ENERGETIC IONS WITH INHOMOGENEOUS SOLIDS [J].

BODE, M ;

OURMAZD, A ;

CUNNINGHAM, J ;

HONG, M .

PHYSICAL REVIEW LETTERS, 1991, 67 (07) :843-846

[2] MICROSCOPIC THEORY OF DIFFUSION ON THE GA SUBLATTICE OF GAAS - VACANCY-ASSISTED DIFFUSION OF SI AND GA [J].

DABROWSKI, J ;

NORTHRUP, JE .

PHYSICAL REVIEW B, 1994, 49 (20) :14286-14289

[3]

Lampert M. A., 1970, CURRENT INJECTION SO

[4] MECHANISM RESPONSIBLE FOR THE SEMIINSULATING PROPERTIES OF LOW-TEMPERATURE-GROWN GAAS - RESPONSE [J].

LIU, X ;

PRASAD, A ;

CHEN, WM ;

KURPIEWSKI, A ;

STOSCHEK, A ;

LILIENTALWEBER, Z ;

WEBER, ER .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1333-1334

[5] ANOMALOUS HALL-EFFECT RESULTS IN LOW-TEMPERATURE MOLECULAR-BEAM-EPITAXIAL GAAS - HOPPING IN A DENSE EL2-LIKE BAND [J].

LOOK, DC ;

WALTERS, DC ;

MANASREH, MO ;

SIZELOVE, JR ;

STUTZ, CE ;

EVANS, KR .

PHYSICAL REVIEW B, 1990, 42 (06) :3578-3581

[6] ANNEALING DYNAMICS OF MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT 200-DEGREES-C [J].

LOOK, DC ;

WALTERS, DC ;

ROBINSON, GD ;

SIZELOVE, JR ;

MIER, MG ;

STUTZ, CE .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) :306-310

[7] EVIDENCE FOR DONOR-GALLIUM VACANCY PAIRS IN SILICON DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

MCQUAID, SA ;

NEWMAN, RC ;

MISSOUS, M ;

OHAGAN, S .

APPLIED PHYSICS LETTERS, 1992, 61 (25) :3008-3010

[8] QUANTITATIVE CHEMICAL LATTICE IMAGING - THEORY AND PRACTICE [J].

OURMAZD, A ;

BAUMANN, FH ;

BODE, M ;

KIM, Y .

ULTRAMICROSCOPY, 1990, 34 (04) :237-255

[9] MEASURING PROPERTIES OF POINT-DEFECTS BY ELECTRON-MICROSCOPY - THE GA VACANCY IN GAAS [J].

ROUVIERE, JL ;

KIM, Y ;

CUNNINGHAM, J ;

RENTSCHLER, JA ;

BOURRET, A ;

OURMAZD, A .

PHYSICAL REVIEW LETTERS, 1992, 68 (18) :2798-2801

[10] PARAMETER-FREE CALCULATIONS OF TOTAL ENERGIES, INTERATOMIC FORCES AND VIBRATIONAL ENTROPIES OF DEFECTS IN SEMICONDUCTORS [J].

SCHEFFLER, M ;

DABROWSKI, J .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1988, 58 (01) :107-121